A Facile Route for Patterned Growth of MetalInsulator Carbon Lateral Junction through One-Pot Synthesis
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- A Facile Route for Patterned Growth of MetalInsulator Carbon Lateral Junction through One-Pot Synthesis
- Kim, Kwang S.; Park, Beomjin; Park, Jaesung; Hong, Byung Hee; Kim, Jin Kon; Han, Sang Woo; Ahn, Jong Hyun; Lee, Zonghoon; Hwang, Chanyong; Novoselov, Konstantin S; Lee, Tae Geol; Hyun, Seung; Mishchenko, Artem; Seoung Ki Lee; Huh, Sung; Jeon, Gumhye; Byun, Jinseok; Chae, Dong Hun; Park, Hyo Ju; Yu, Seong Uk; Kim, Yong Jin; Son, Jin Gyeong
- Issue Date
- AMER CHEMICAL SOC
- ACS NANO, v.9, no.88, pp.8352 - 8360
- Precise graphene patterning is of critical importance for tailor-made and sophisticated two-dimensional nanoelectronic and optical devices. However, graphene-based heterostructures have been grown by delicate multistep chemical vapor deposition methods, limiting preparation of versatile heterostructures. Here, we report one-pot synthesis of graphene/amorphous carbon (a-C) heterostructures from a solid source of polystyrene via selective photo-cross-linking process. Graphene is successfully grown from neat polystyrene regions, while patterned cross-linked polystyrene regions turn into a-C because of a large difference in their thermal stability. Since the electrical resistance of a-C is at least 2 orders of magnitude higher than that for graphene, the charge transport in graphene/a-C heterostructure occurs through the graphene region. Measurement of the quantum Hall effect in graphene/a-C lateral heterostructures clearly confirms the reliable quality of graphene and well-defined graphene/a-C interface. The direct synthesis of patterned graphene from polymer pattern could be further exploited to prepare versatile heterostructures.
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