Chemical Vapor Deposition Growth of Graphene and Related Materials
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- Chemical Vapor Deposition Growth of Graphene and Related Materials
- Kitaura, Ryo; Miyata, Yasumitsu; Xiang, Rong; Hone, James; Kong, Jing; Ruoff, Rodney S.; Maruyama, Shigeo
- Issue Date
- PHYSICAL SOC JAPAN
- JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, v.84, no.12, pp.121013
- Research on atomic layers including graphene, hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDCs) and their heterostructures has attracted a great deal of attention. Chemical vapor deposition (CVD) can provide large-area structure-defined high-quality atomic layer samples, which have considerably contributed to the recent advancement of atomic-layer research. In this article, we focus on the CVD growth of various atomic layers and review recent progresses including (1) the CVD growth of graphene using methane and ethanol as carbon sources, (2) the CVD growth of hBN using borazine and ammonia borane, (3) the CVD growth of various TMDCs using single and multi-furnace methods, and (4) CVD growth of vertical and lateral heterostructures such as graphene/hBN, MoS2/graphite, WS2/hBN and MoS2/WS2
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