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Chemical Vapor Deposition Growth of Graphene and Related Materials

Author(s)
Kitaura, RyoMiyata, YasumitsuXiang, RongHone, JamesKong, JingRuoff, Rodney S.Maruyama, Shigeo
Issued Date
2015-12
DOI
10.7566/JPSJ.84.121013
URI
https://scholarworks.unist.ac.kr/handle/201301/18006
Fulltext
http://journals.jps.jp/doi/10.7566/JPSJ.84.121013
Citation
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, v.84, no.12, pp.121013
Abstract
Research on atomic layers including graphene, hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDCs) and their heterostructures has attracted a great deal of attention. Chemical vapor deposition (CVD) can provide large-area structure-defined high-quality atomic layer samples, which have considerably contributed to the recent advancement of atomic-layer research. In this article, we focus on the CVD growth of various atomic layers and review recent progresses including (1) the CVD growth of graphene using methane and ethanol as carbon sources, (2) the CVD growth of hBN using borazine and ammonia borane, (3) the CVD growth of various TMDCs using single and multi-furnace methods, and (4) CVD growth of vertical and lateral heterostructures such as graphene/hBN, MoS2/graphite, WS2/hBN and MoS2/WS2
Publisher
PHYSICAL SOC JAPAN
ISSN
0031-9015
Keyword
HEXAGONAL BORON-NITRIDESINGLE-CRYSTAL GRAPHENETRANSITION-METAL DICHALCOGENIDESWALLED CARBON NANOTUBESATOMICALLY THIN HETEROSTRUCTURESDER-WAALS HETEROSTRUCTURESQUALITY MONOLAYER WS2LARGE-SCALE SYNTHESISLARGE-AREA SYNTHESISLAYER GRAPHENE

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