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Lee, Zonghoon
Atomic-Scale Electron Microscopy (ASEM) Lab
Research Interests
  • Advanced Transmission Electron Microscopy (TEM/STEM), in Situ TEM, graphene, 2D materials, low-dimensional crystals, nanostructured materials

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Nucleation and Growth of the HfO2 Dielectric Layer for Graphene-Based Devices

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Title
Nucleation and Growth of the HfO2 Dielectric Layer for Graphene-Based Devices
Author
Oh, Il-KwonTanskanen, JukkaJung, HanearlKim, KangsikLee, Mi JinLee, ZonghoonLee, Seoung-KiAhn, Jong-HyunLee, Chang WanKim, KwanpyoKim, HyungjunLee, Han-Bo-Ram
Issue Date
2015-09
Publisher
AMER CHEMICAL SOC
Citation
CHEMISTRY OF MATERIALS, v.27, no.17, pp.5868 - 5877
Abstract
We investigated nucleation and growth characteristics of atomic layer deposition (ALD) HfO2 on exfoliated and chemical vapor deposition (CVD) graphene by using two Hf precursors, tetrakis(dimethylamino)hafnium (TDMAH) and hafnium tetrachloride (HfCl4). Experimental results and theoretical calculations indicate that HfO2 nucleation is more favorable on CVD graphene than on exfoliated graphene due to the existence of defect sites. Also, the TDMAH precursor showed much more unfavorable nucleation and growth than HfCl4 due to different initial adsorption mechanisms, affecting lower leakage currents and breakdown electric field. ALD growth characteristics of HfO2 will be fundamentally and practically significant for realizing the fabrication of graphene-based electronic devices
URI
https://scholarworks.unist.ac.kr/handle/201301/17341
URL
http://pubs.acs.org/doi/10.1021/acs.chemmater.5b01226
DOI
10.1021/acs.chemmater.5b01226
ISSN
0897-4756
Appears in Collections:
PHY_Journal Papers
MSE_Journal Papers
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