Full metadata record
DC Field | Value | Language |
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dc.citation.startPage | 10764 | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 5 | - |
dc.contributor.author | Shin, Hyun Wook | - |
dc.contributor.author | Lee, Sang Jun | - |
dc.contributor.author | Kim, Doo Gun | - |
dc.contributor.author | Bae, Myung-Ho | - |
dc.contributor.author | Heo, Jaeyeong | - |
dc.contributor.author | Choi, Kyoung Jin | - |
dc.contributor.author | Choi, Won Jun | - |
dc.contributor.author | Choe, Jeong-woo | - |
dc.contributor.author | Shin, Jae Cheol | - |
dc.date.accessioned | 2023-12-22T01:10:00Z | - |
dc.date.available | 2023-12-22T01:10:00Z | - |
dc.date.created | 2015-09-25 | - |
dc.date.issued | 2015-06 | - |
dc.description.abstract | One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 mu m) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 mu m provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 x 10(8) cm.Hz(1/2)/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.5, pp.10764 | - |
dc.identifier.doi | 10.1038/srep10764 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.scopusid | 2-s2.0-84934881091 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/17179 | - |
dc.identifier.url | http://www.nature.com/articles/srep10764 | - |
dc.identifier.wosid | 000355613400001 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | SI(100) | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | REGION | - |
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