ZnO Nanowire Based Photoelectrical Resistive Switches for Flexible Memory
Cited 0 times inCited 0 times in
- ZnO Nanowire Based Photoelectrical Resistive Switches for Flexible Memory
- Park, Jinjoo; Song, Hongseon; Lee, Eun Kwang; Oh, Joon Hak; Yong, Kijung
- Issue Date
- ELECTROCHEMICAL SOC INC
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.162, no.9, pp.H713 - H718
- In this work, a non-volatile resistive optoelectronic memory was demonstrated in a flexible system that plays the dual roles of a reversible photo-reactive element and a signal-collecting element. We attempted to demonstrate the tactile sensor by detecting the rotation angle and bending angle of the wearable information appliance worn by the user. This motion-sensing for certain critical angle and information-storing functionality is enabled by photo-tunable resistive switching behaviors, which results from bending the flexible device in diverse convex angles with respect to the incident light direction. Furthermore, we investigated the basic mechanism of resistive photoelectrical switching behaviors by studying the effects of electrostatic barrier at the Au/ZnO junction, e.g., a Schottky barrier depending on the photonic and electric condition. Moreover, by employing a polymer structure, application in a prototype device provided improved endurance or retention of data.
- Appears in Collections:
- ETC_Journal Papers
- Files in This Item:
- There are no files associated with this item.
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.