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ZnO Nanowire Based Photoelectrical Resistive Switches for Flexible Memory

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Title
ZnO Nanowire Based Photoelectrical Resistive Switches for Flexible Memory
Author
Park, JinjooSong, HongseonLee, Eun KwangOh, Joon HakYong, Kijung
Issue Date
2015-09
Publisher
ELECTROCHEMICAL SOC INC
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.162, no.9, pp.H713 - H718
Abstract
In this work, a non-volatile resistive optoelectronic memory was demonstrated in a flexible system that plays the dual roles of a reversible photo-reactive element and a signal-collecting element. We attempted to demonstrate the tactile sensor by detecting the rotation angle and bending angle of the wearable information appliance worn by the user. This motion-sensing for certain critical angle and information-storing functionality is enabled by photo-tunable resistive switching behaviors, which results from bending the flexible device in diverse convex angles with respect to the incident light direction. Furthermore, we investigated the basic mechanism of resistive photoelectrical switching behaviors by studying the effects of electrostatic barrier at the Au/ZnO junction, e.g., a Schottky barrier depending on the photonic and electric condition. Moreover, by employing a polymer structure, application in a prototype device provided improved endurance or retention of data.
URI
https://scholarworks.unist.ac.kr/handle/201301/17141
URL
http://jes.ecsdl.org/content/162/9/H713
DOI
10.1149/2.1111509jes
ISSN
0013-4651
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