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Highly Luminescent InP/GaP/ZnS Nanocrystals and Their Application to White Light-Emitting Diodes
- Author(s)
- Kim, Sungwoo, Kim, Taehoon, Kang, Meejae, Kwak, Seong Kwon, Yoo, Tae Wook, Park, Lee Soon, Yang, Ilseung, Hwang, Sunjin, Lee, Jung Eun, Kim, Seong Keun, Kim, Sang-Wook
- Issued Date
- 2012-02
- Citation
- JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.134, no.8, pp.3804 - 3809
- Abstract
- Highly stable and luminescent InP/GaP/ZnS QDs with a maximum quantum yield of 85% were synthesized by in situ method. The GaP shell rendered passivation of the surface and removed the traps. TCSPC data showed an evidence for the GaP shell. InP/GaP/ZnS QDs show better stability than InP/ZnS. We studied the optical properties of white QD-LEDs corresponding to various QD concentrations. Among various concentrations, the white QD-LEDs with 0.5 mL of QDs exhibited a luminous efficiency of 54.71 lm/W, Ra of 80.56, and CCT of 7864 K
- Publisher
- AMER CHEMICAL SOC
- ISSN
- 0002-7863
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