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Jin, Hosub
Quantum Materials Design Lab
Research Interests
  • Spin-orbit coupling, electron-correlation, topological quantum phases

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Topological domain walls and quantum valley Hall effects in silicene

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Title
Topological domain walls and quantum valley Hall effects in silicene
Author
Kim, YoungkukChoi, KeunsuIhm, JisoonJin, Hosub
Keywords
BILAYER GRAPHENE; CHERN NUMBERS
Issue Date
2014-02
Publisher
AMER PHYSICAL SOC
Citation
PHYSICAL REVIEW B, v.89, no., pp.085429 -
Abstract
Silicene is a two-dimensional honeycomb lattice made of silicon atoms, which is considered to be a new Dirac fermion system. Based on first-principles calculations, we examine the possibility of the formation of solitonlike topological domain walls (DWs) in silicene. We show that the DWs between regions of distinct ground states of the buckled geometry should bind electrons when a uniform electric field is applied in the perpendicular direction to the sheet. The topological origin of the electron confinement is demonstrated based on numerical calculations of the valley-specific Hall conductivities, and possible experimental signatures of the quantum valley Hall effects are discussed using simulated scanning tunneling microscopy images. Our results strongly suggest that silicene could be an ideal host for the quantum valley Hall effect, thus providing a pathway to the valleytronics in silicon-based technology.
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DOI
10.1103/PhysRevB.89.085429
ISSN
2469-9950
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PHY_Journal Papers
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