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Yang, Changduk
Advanced Tech-Optoelectronic Materials Synthesis Lab (ATOMS)
Research Interests
  • Optoelectronic materials synthesis/organic electronics, functionalization of carbonaceous solids, advanced materials chemistry, macromolecular chemistry

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Effect of electron-donating unit on crystallinity and charge transport in organic field-effect transistors with thienoisoindigo-based small molecules

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Title
Effect of electron-donating unit on crystallinity and charge transport in organic field-effect transistors with thienoisoindigo-based small molecules
Author
Nketia-Yawson, BenjaminKang, HyojinShin, Eul-YongXu, YongYang, ChangdukNoh, Yong-Young
Issue Date
2015-11
Publisher
ELSEVIER SCIENCE BV
Citation
ORGANIC ELECTRONICS, v.26, pp.151 - 157
Abstract
We report the effect of an electron-donating unit on solid-state crystal orientation and charge transport in organic field-effect transistors (OFETs) with thienoisoindigo (TIIG)-based small molecules. End-capping of different electron-donor moieties [benzene (Bz), naphthalene (Np), and benzofuran (Bf)] onto TIIG (giving TIIG-Bz, TIIG-Np, and TIIG-Bf) is resulted in different electronic energy levels, solid-state morphologies and performance in OFETs. The 80°C post-annealed TIIG-Np OFETs show the best device performance with a best hole mobility of 0.019 cm2 V-1 s-1 and threshold voltage of -8.6 ± 0.9 V using top gate/bottom contact geometry and a CYTOP gate dielectric. We further investigated the morphological microstructure of the TIIG-based small molecules by using grazing incidence wide angle X-ray scattering, atomic force microscopy and a polarized optical microscope. The electronic transport levels of the TIIG-based small molecules in thin-film states were investigated using ultraviolet photoelectron spectroscopy to examine the charge injection properties of the gold electrode. © 2015 Elsevier B.V. All rights reserved
URI
https://scholarworks.unist.ac.kr/handle/201301/16568
URL
http://www.sciencedirect.com/science/article/pii/S1566119915300598
DOI
10.1016/j.orgel.2015.07.038
ISSN
1566-1199
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