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Thin-film multimaterial optoelectronic integrated circuits

Author(s)
Jokerst, Nan MarieBrooke, Martin A.Vendier, OlivierWilkinson, ScottFike, SuzanneLee, MyungheeTwyford, ElizabethCross, JeffreyBuchanan, BrentWills, Scott
Issued Date
1996-02
DOI
10.1109/96.486491
URI
https://scholarworks.unist.ac.kr/handle/201301/12599
Fulltext
http://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?arnumber=486491
Citation
IEEE TRANSACTIONS ON COMPONENTS, PACKAGING, AND MANUFACTURING TECHNOLOGY. PART B, ADVANCED PACKAGING, v.19, no.1, pp.97 - 106
Abstract
The multimaterial integration of thin-film optoelectronic devices with host substrates ranging from silicon circuits to glass waveguides to polymer micromachines offers to the system designer the freedom to choose the optimal materials for each component to achieve performance and cost objectives. Thin-film compound semiconductor optoelectronic devices are comparable to, and, in some cases, better than, their on-wafer counterparts. Thin-film detectors have been integrated with receiver circuits and movable micromachines, thin-film emitters with drive circuitry, and both have been used to demonstrate three-dimensionally interconnected systems. Vertical electrical integration of detector arrays on top of circuits is examined for massively parallel processing of images. Vertical optical interconnections of stacked silicon circuits (which are transparent to the wavelength of light used) are explored, and are used to develop a massively parallel processing architecture based upon low memory, high throughput, and high input/output
Publisher
Institute of Electrical and Electronics Engineers
ISSN
1070-9894

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