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- Lee, Jae Sung
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Indium induced band gap tailoring in AgGa(1-x)In(x)S(2) chalcopyrite structure for visible light photocatalysis
- Alternative Title
- Indium induced band gap tailoring in AgGa(1-x)In(x)S(2) chalcopyrite structure for visible light photocatalysis
- Author(s)
- Jang, Jum Suk, Borse, Pramod H., Lee, Jae Sung, Choi, Sun Hee, Kim, Hyun Gyu
- Issued Date
- 2008-04
- Citation
- JOURNAL OF CHEMICAL PHYSICS, v.128, no.15, pp.845 - 850
- Abstract
- Indium was substituted at gallium site in chalcopyrite AgGaS(2) structure by using a simple solid solution method. The spectroscopic analysis using extended x-ray absorption fine structure and x-ray photoelectron spectroscopy confirmed the indium substitution in AgGaS(2) lattice. The band gap energy of AgGa(1-x)In(x)S(2) (x=0 - 1) estimated from the onset of absorption edge was found to be reduced from 2.67 eV (x=0 ) to 1.9 eV (x=1 ) by indium substitution. The theoretical and experimental studies showed that the indium s orbitals in AgGa(1-x)In(x)S(2) tailored the band gap energy, thereby modified the photocatalytic activity of the AgGa(1-x)In(x)S(2). (c) 2008 American Institute of Physics
- Publisher
- AMER INST PHYSICS
- ISSN
- 0021-9606
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