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Ki, Hyungson
Laser Processing & Multiphysics Systems Laboratory
Research Interests
  • Laser materials processing
  • Laser material interaction

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Water-assisted pulsed Er:YAG laser interaction with silicon

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Title
Water-assisted pulsed Er:YAG laser interaction with silicon
Author
Kim, JaehunKi, Hyungson
Issue Date
2015-07
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.118, no.1, pp.018105
Abstract
Silicon is virtually transparent to the Er:YAG laser with a wavelength of 2.94 mu m. In this study, we report that moderately doped silicon (1-10 Omega cm) can be processed by a pulsed Er:YAG laser with a pulse duration of 350 mu s and a peak laser intensity of 1.7 x 10(5) W/cm(2) by applying a thin water layer on top of silicon as a light absorbing medium. In this way, water is heated first by strongly absorbing the laser energy and then heats up the silicon wafer indirectly. As the silicon temperature rises, the free carrier concentration and therefore the absorption coefficient of silicon will increase significantly, which may enable the silicon to get directly processed by the Er:YAG laser when the water is vaporized completely. We also believe that the change in surface morphology after melting could contribute to the increase in the laser beam absorptance. It was observed that 525 nm-thick p-type wafer specimens were fully penetrated after 15 laser pulses were irradiated. Bright yellow flames were observed during the process, which indicates that the silicon surface reached the melting point. (C) 2015 AIP Publishing LLC.
URI
https://scholarworks.unist.ac.kr/handle/201301/12283
URL
http://scitation.aip.org/content/aip/journal/jap/118/1/10.1063/1.4923346
DOI
10.1063/1.4923346
ISSN
0021-8979
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