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Park, Kibog
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Performance enhancement of plasmonic sub-terahertz detector based on antenna integrated low-impedance silicon MOSFET

Author(s)
Ryu, Min WooKim, Kwan SungLee, Jeong SeopPark, KibogYang, Jong-RyulHan, Seong-TaeKim, Kyung Rok
Issued Date
2015-03
DOI
10.1109/LED.2015.2394446
URI
https://scholarworks.unist.ac.kr/handle/201301/10985
Fulltext
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7017494
Citation
IEEE ELECTRON DEVICE LETTERS, v.36, no.3, pp.220 - 222
Abstract
We demonstrate the performance enhancement of field-effect transistor (FET)-based plasmonic terahertz (THz) detector with monolithic integrated antenna in low-impedance regime and report the experimental results of Si MOSFET impedance in THz regime using 0.2-THz measurement system. By designing FET with low-impedance ranges (<1 kΩ) and integrating antennas with impedances of 50 and 100 Ω, we found that our low-impedance MOSFETs have the input impedance criterion of 50 Ω at 0.2 THz and the MOSFETs with thinner gate oxide show the highly enhanced plasmonic photoresponses at 50-Ω antenna by 325 times from the result of the detector without antenna
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN
0741-3106
Keyword (Author)
detectorimpedanceMOSFETphotoresponseplasmonicterahertz
Keyword
ARRAY

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