One pot solvothermal synthesis of colloidal Cu(In1-xGax)Se2 (CIGS) quantum dots for solar cell applications

Abstract

The colloidal Cu(In1 - xGax)Se2 (CIGS) quantum dots (QDs) were synthesized by a facile one pot solvothermal method. The as-synthesized CIGS QDs having the average particle size of 5-10 nm in range. The hexagonal crystal structure was confirmed with X-ray diffraction spectroscopy. The band gap of the QDs was calculated to be 2.44 eV using UV-visible spectrum. The photovoltaic properties of CIGS QDs were tested by the fabrication of quantum dot sensitized solar cells (QDSCs) via immersing method. The QDSCs showed 0.057% power conversion efficiency (PCE) with the short circuit current (Jsc) of 0.243 mA/cm2, open circuit potential (Voc) of 0.433 V and fill factor (FF) of 54.1%.