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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Seamless Stitching of Graphene Domains on Polished Copper (111) Foil

Cited 8 times inthomson ciCited 1 times inthomson ci
Title
Seamless Stitching of Graphene Domains on Polished Copper (111) Foil
Author
Nguyen, Van LuanShin, Bong GyuDuong, Dinh LocKim, Sung TaePerello, DavidLim, Young JinYuan, Qing HongDing, FengJeong, Hu YoungShin, Hyeon SukLee, Seung MiChae, Sang HoonVu, Quoc AnLee, Seung HeeLee, Young Hee
Issue Date
2015-02
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v.27, no.8, pp.1376 - 1382
Abstract
Seamless stitching of graphene domains on polished copper (111) is proved clearly not only at atomic scale by scanning tunnelling microscopy (STM) and transmission electron micoscopy (TEM), but also at the macroscale by optical microscopy after UV-treatment. Using this concept of seamless stitching, we are able to synthesis 6 cm × 3 cm monocrystalline graphene without grain boundaries on polished copper (111) foil, which is only limited by the chamber size.
URI
https://scholarworks.unist.ac.kr/handle/201301/10233
URL
http://onlinelibrary.wiley.com/doi/10.1002/adma.201404541/abstract
DOI
10.1002/adma.201404541
ISSN
0935-9648
Appears in Collections:
CHM_Journal Papers
UCRF_Journal Papers
MSE_Journal Papers
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