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Seamless Stitching of Graphene Domains on Polished Copper (111) Foil

Author(s)
Nguyen, Van LuanShin, Bong GyuDuong, Dinh LocKim, Sung TaePerello, DavidLim, Young JinYuan, Qing HongDing, FengJeong, Hu YoungShin, Hyeon SukLee, Seung MiChae, Sang HoonVu, Quoc AnLee, Seung HeeLee, Young Hee
Issued Date
2015-02
DOI
10.1002/adma.201404541
URI
https://scholarworks.unist.ac.kr/handle/201301/10233
Fulltext
http://onlinelibrary.wiley.com/doi/10.1002/adma.201404541/abstract
Citation
ADVANCED MATERIALS, v.27, no.8, pp.1376 - 1382
Abstract
Seamless stitching of graphene domains on polished copper (111) is proved clearly not only at atomic scale by scanning tunnelling microscopy (STM) and transmission electron micoscopy (TEM), but also at the macroscale by optical microscopy after UV-treatment. Using this concept of seamless stitching, we are able to synthesis 6 cm × 3 cm monocrystalline graphene without grain boundaries on polished copper (111) foil, which is only limited by the chamber size.
Publisher
WILEY-V C H VERLAG GMBH
ISSN
0935-9648
Keyword
SINGLE-CRYSTAL GRAPHENEGRAIN-BOUNDARIESGROWTHMONOLAYERHYDROGEN

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