BROWSE

Related Researcher

Author's Photo

Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

ITEM VIEW & DOWNLOAD

Dependence of spontaneous polarization on stacking sequence in SiC revealed by local Schottky barrier height variations over a partially formed 8H-SiC layer on a 4H-SiC substrate

Cited 1 times inthomson ciCited 1 times inthomson ci
Title
Dependence of spontaneous polarization on stacking sequence in SiC revealed by local Schottky barrier height variations over a partially formed 8H-SiC layer on a 4H-SiC substrate
Author
Park, KibogGo, Heung SeokJeon, YoungeunPelz, Jonathan P.Zhang, XuanSkowronski, Marek
Issue Date
2011-12
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.99, no.25
Abstract
Ballistic electron emission microscopy was used to measure the increase of local Schottky barrier (compared to the surrounding 4H-SiC area) over a partial 8H-SiC layer that is the surface-exposed tail of an 8H stacking fault inclusion extending from 4H substrate. This local increase is believed to be due to polarization charge induced at the interface of partial 8H layer and underlying 4H host, resulting from the spontaneous polarization (SP) difference between SiC regions with different bilayer stacking. This is a direct experimental probe of the dependence of SP in SiC on local stacking sequence by measuring carrier transport.
URI
https://scholarworks.unist.ac.kr/handle/201301/10065
URL
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84555218447
DOI
10.1063/1.3670329
ISSN
0003-6951
Appears in Collections:
PHY_Journal Papers
Files in This Item:
There are no files associated with this item.

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qrcode

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU