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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

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Low-temperature formation of epitaxial graphene on 6H-SiC induced by continuous electron beam irradiation

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Title
Low-temperature formation of epitaxial graphene on 6H-SiC induced by continuous electron beam irradiation
Author
Go, HeungseokKwak, JinsungJeon, YoungeunKim, Sung-DaeLee, Byung CheolKang, Hyun SukKo, Jae-HyeonKim, NamKim, Bum-KyuYoo, Jung-WooKim, Sung YoubKim, Young-WoonKwon, Soon-YongPark, Kibog
Issue Date
2012-08
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.101, no.9, pp.0092105
Abstract
It is observed that epitaxial graphene forms on the surface of a 6H-SiC substrate by irradiating electron beam directly on the sample surface in high vacuum at relatively low temperature (similar to 670 degrees C). The symmetric shape and full width at half maximum of 2D peak in the Raman spectra indicate that the formed epitaxial graphene is turbostratic. The gradual change of the Raman spectra with electron beam irradiation time increasing suggests that randomly distributed small grains of epitaxial graphene form first and grow laterally to cover the entire irradiated area. The sheet resistance of epitaxial graphene film is measured to be similar to 6.7 k Omega/sq.
URI
https://scholarworks.unist.ac.kr/handle/201301/10059
URL
https://aip.scitation.org/doi/10.1063/1.4748592
DOI
10.1063/1.4748592
ISSN
0003-6951
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