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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

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Growth of Wrinkle-Free Graphene on Texture-Controlled Platinum Films and Thermal-Assisted Transfer of Large-Scale Patterned Graphene

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Title
Growth of Wrinkle-Free Graphene on Texture-Controlled Platinum Films and Thermal-Assisted Transfer of Large-Scale Patterned Graphene
Author
Choi, Jae-KyungKwak, JinsungPark, Soon-DongYun, Hyung DukKim, Se-YangJung, MinbokKim, Sung YoubPark, KibogKang, SeoktaeKim, Sung-DaePark, Dong-YeonLee, Dong-SooHong, Suk-kyungShin, Hyung-JoonKwon, Soon-Yong
Issue Date
2015-01
Publisher
AMER CHEMICAL SOC
Citation
ACS NANO, v.9, no.1, pp.679 - 686
Abstract
Growth of large-scale patterned, wrinkle-free graphene and the gentle transfer technique without further damage are most important requirements for the practical use of graphene. Here we report the growth of wrinkle-free, strictly uniform monolayer graphene films by chemical vapor deposition on a platinum (Pt) substrate with texture-controlled giant grains and the thermal-assisted transfer of large-scale patterned graphene onto arbitrary substrates. The designed Pt surfaces with limited numbers of grain boundaries and improved surface perfectness as well as small thermal expansion coefficient difference to graphene provide a venue for uniform growth of monolayer graphene with wrinkle-free characteristic. The thermal-assisted transfer technique allows the complete transfer of large-scale patterned graphene films onto arbitrary substrates without any ripples, tears, or folds. The transferred graphene shows high crystalline quality with an average carrier mobility of similar to 5500 cm(2) V-1 s(-1) at room temperature. Furthermore, this transfer technique shows a high tolerance to variations in types and morphologies of underlying substrates.
URI
https://scholarworks.unist.ac.kr/handle/201301/10050
URL
http://pubs.acs.org/doi/abs/10.1021/nn5060909
DOI
10.1021/nn5060909
ISSN
1936-0851
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