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Analyzing the Contact-Doping Effect in In₂O₃ FETs: Unveiling the Mechanisms Behind the Threshold-Voltage Roll-Off in Oxide Semiconductor Transistors File

Lin, Jian-Yu , Niu, Chang , Lin, Zehao , Lee, Sumi , Kim, Taehyun , Lee, Jungho , Liu, Chang , Lu, Juanjuan , Wang, Haiyan , Alam, Muhammad Ashraful , et al

Article Issue Date2025-06 View140
Engineering Amorphous IGZO Thin-Film Transistors: The Role of Composition and Channel Thickness in Mobility-Threshold Voltage Optimization File File

Kim, Taehyun , Jang, Hyeongjun , Park, Beomjin , Shin, Seokyeon , Alam, Muhammad A. , Ye, Peide D. , Jeong, Changwook

Article Issue Date2025-12 View12
First Demonstration of Top-Gate Enhancement- Mode ALD In2O3 FETs With High Thermal Budget of 600 °°C for DRAM Applications File

Lin, Jian-Yu , Zhang, Zhuocheng , Lin, Zehao , Niu, Chang , Zhang, Yizhi , Zhang, Yifan , Kim, Taehyun , Jang, H. , Sung, C. , Hong, M. , et al

Article Issue Date2024-10 View86
InGaZnO4 and In2O3 Mobility Trend: The Role of Structural Disorder from Amorphous to Crystalline States File

Jang, Hyeongjun , Kim, Taehyun , Lee, Wonsok , Cho, Minhee , Ha, Daewon , Alam, Muhammad A. , Ye, Peide D. , Jeong, Changwook

Article Issue Date2025-06 View105
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