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Characterization of Thermal Stability and Unexpected Mobility Enhancement in IGZO FETs Measured up to 750°C. File

Nam, Kisoo , Niu, Chang , Jang, Hyeongjun , Park, Beomjin , Park, Yoonju , Lee, Youngjoon , Jeong, Changwook , Ye, Peide

Article Issue Date2026-03 View11
Enhancement of In2O3 Field-Effect Mobility Up To 152 cm2V-1s-1 Using HZO-Based Higher-k Linear Dielectric

Lin, Zehao , Niu, Chang , Jang, Hyeongjun , Kim, Taehyun , Jeong, Changwook , Ye, Peide

Conference Paper Issue Date2024-06-10 View76
Quantum Confinement Controlled Positive to Negative Schottky Barrier Conversion in Ultrathin In2O3 Transistor Contacts

Lin, Jian-Yu , Niu, Chang , Lin, Zehao , Kim, Taehyun , Park, Beomjin , Jang, Hyeongjun , Jeong, Changwook , Ye, Peide

Conference Paper Issue Date2024-12-07 View123
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