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Nonvolatile Capacitance Changes in Metal-Oxide-Semiconductor Device with Resistive Switching Floating-Gate Structure for Nonvolatile Memory and Programmable Logic Device Application

Kim, Minju , Park, Daehoon , Beom, Keonwon , Yang, Paul , Kim, Sunki , Kim, Hyung Jun , Yoon, Tae-Sik

Conference Paper Issue Date2019-04-23 View71
Single-and Double-Gate Synaptic Transistor with a TaOx Gate Insulator and an IGZO Semiconductor Channel Layer

Beom, Keonwon , Yang, Paul , Park, Daehoon , Kim, Minju , Kim, Sunki , Kim, Hyung Jun , Kang, Chi Jung , Yoon, Tae-Sik

Conference Paper Issue Date2019-04-23 View67
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