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Hydrogen and Stress-Induced De-lamination in an IrO2 Layer of Ferroelectric Random Access Memories File

Kim, Jai-Hyun , Jung, Dong Jin , Kim, Hyun-Ho , Hong, Young Ki , Lee, Eun Sun , Kim, Song Yi , Ko, Han Kyoung , Jung, Ju Young , Choi, Do Yeon , Kang, SeungKuk , et al

Article Issue Date2009-04 View79
Robust three-metallization back end of line process for 0.18 mu m embedded ferroelectric random access memory File

Kang, Seung-Kuk , Rhie, Hyoung-Seub , Kim, Hyun-Ho , Koo, Bon-Jae , Joo, Heung-Jin , Park, Jung-Hun , Kang, Young-Min , Choi, Do-Hyun , Lee, Sung-Young , Jeong, Hong-Sik , et al

Article Issue Date2005-04 View70
Robust two-dimensional stack capacitor technologies for 64 Mbit one-transistor-one-capacitor ferroelectric random access memory File

Jung, Ju-Young , Joo, Heung-Jin , Park, Jung-Hoon , Kang, Seuno-Kuk , Kim, Hwi-San , Choi, Do-Yeon , Kim, Jai-Hyun , Lee, Eun-Sun , Hong, Young-Ki , Kim, Hyun-Ho , et al

Article Issue Date2007-04 View72
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