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Formation of Al2O3 Barrier in Magnetic Junctions on Different Substrates by O2 Plasma Etching

Wang, Zhen-Jun , Jeong, Won-Cheol , Yoon, Yeo-Geon , Jeong, Changwook , Joo, Seung-Ki

Article Issue Date2001-09 View42
Ge(2)Sb(2)Te(5) confined structures and integration of 64Mb phase-change random access memory File

Yeung, Fai , Ahn, Su-Jin , Hwang, Young-Nam , Jeong, Changwook , Song, Yoon-Jong , Lee, Su-Youn , Lee, Se-Ho , Ryoo, Kyung-Chang , Park, Jae-Hyun , Shin, Jae-Min , et al

Article Issue Date2005-04 View121
Highly reliable ring-type contact for high-density phase change memory File

Jeong, Changwook , Ahn, Su-Jin , Hwang, Young-Nam , Song, Yoon-Jong , Oh, Jac-Hee , Lee, Su-Youn , Lee, Se-Ho , Ryoo, Kyung-Chang , Park, Jong-Hyun , Park, Jae-Hyun , et al

Article Issue Date2006-04 View104
Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer File

Lee, Yun Ki , Chun, Byong Sun , Kim, Young Keun , Hwang, Injun , Park, Wanjun , Kim, Taewan , Jeong, Won-Cheol , Lee, J. , Jeong, Hong Sik

Article Issue Date2005-10 View92
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