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Engineering Amorphous IGZO Thin-Film Transistors: The Role of Composition and Channel Thickness in Mobility-Threshold Voltage Optimization File File

Kim, Taehyun , Jang, Hyeongjun , Park, Beomjin , Shin, Seokyeon , Alam, Muhammad A. , Ye, Peide D. , Jeong, Changwook

Article Issue Date2025-12 View16
Enhancement of In2O3 Field-Effect Mobility Up To 152 cm2V-1s-1 Using HZO-Based Higher-k Linear Dielectric

Lin, Zehao , Niu, Chang , Jang, Hyeongjun , Kim, Taehyun , Jeong, Changwook , Ye, Peide

Conference Paper Issue Date2024-06-10 View75
InGaZnO4 and In2O3 Mobility Trend: The Role of Structural Disorder from Amorphous to Crystalline States File

Jang, Hyeongjun , Kim, Taehyun , Lee, Wonsok , Cho, Minhee , Ha, Daewon , Alam, Muhammad A. , Ye, Peide D. , Jeong, Changwook

Article Issue Date2025-06 View108
Non-Perturbative Oxygen Vacancy Mapping via Independently-Contacted, Reciprocally-Switching Double-Layer ECRAM for In-Memory Computing File

Han, Seungmin , Kwak, Hyunjeong , Lee, Jungho , Son, Jeonghoon , Kim, Seungkun , Byun, Jinho , Ham, Beomjoo , Jang, Hyeongjun , Lee, Youngjoon , Jeong, Changwook , et al

Article Issue Date2025-11 View31
Quantum Confinement Controlled Positive to Negative Schottky Barrier Conversion in Ultrathin In2O3 Transistor Contacts

Lin, Jian-Yu , Niu, Chang , Lin, Zehao , Kim, Taehyun , Park, Beomjin , Jang, Hyeongjun , Jeong, Changwook , Ye, Peide

Conference Paper Issue Date2024-12-07 View111
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