| 2012-12 | A study of capping layers for sulfur monolayer doping on III-V junctions | Yum, J. H.; Shin, H. S.; Hill, R.; Oh, J.; Lee, H. D.; Mushinski, Ryan M.; Hudnall, Todd W.; Bielawski, C. W.; Banerjee, S. K.; Loh, W. Y.; Wang, Wei-E; Kirsch, Paul | ARTICLE | 51 |
| 2011-11 | A study of highly crystalline novel beryllium oxide film using atomic layer deposition | Yum, J. H.; Akyol, T.; Lei, M.; Ferrer, D. A.; Hudnall, Todd. W.; Downer, M.; Bielawski, C. W.; Bersuker, G.; Lee, J. C.; Banerjee, S. K. | ARTICLE | 44 |
| 2011-03 | Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices | Yum, J. H.; Akyol, T.; Lei, M.; Hudnall, T.; Bersuker, G.; Downer, M.; Bielawski, C. W.; Lee, J. C.; Banerjee, S. K. | ARTICLE | 45 |
| 2014-02 | Atomic layer etching of BeO using BCl3/Ar for the interface passivation layer of III-V MOS devices | Min, K. S.; Kang, S. H.; Kim, J. K.; Yum, J. H.; Jhon, Y. I.; Hudnall, Todd W.; Bielawski, C. W.; Banerjee, S. K.; Bersuker, G.; Jhon, M. S.; Yeom, G. Y. | ARTICLE | 77 |
| 2012-10 | Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices | Yum, J. H.; Oh, J.; Hudnall, Todd. W.; Bielawski, Christopher W.; Bersuker, G.; Banerjee, S. K. | ARTICLE | 43 |
| 2011-11 | Comparison of the self-cleaning effects and electrical characteristics of BeO and Al2O3 deposited as an interface passivation layer on GaAs MOS devices | Yum, J. H.; Akyol, T.; Ferrer, D. A.; Lee, J. C.; Banerjee, S. K.; Lei, M.; Downer, M.; Hudnall, Todd. W.; Bielawski, C. W.; Bersuker, G. | ARTICLE | 33 |
| 2012-01 | Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates | Yum, J. H.; Akyol, T.; Lei, M.; Ferrer, D. A.; Hudnall, Todd W.; Downer, M.; Bielawski, C. W.; Bersuker, G.; Lee, J. C.; Banerjee, S. K. | ARTICLE | 68 |
| 2011-07 | Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric | Yum, J. H.; Akyol, T.; Lei, M.; Ferrer, D. A.; Hudnall, Todd. W.; Downer, M.; Bielawski, C. W.; Bersuker, G.; Lee, J. C.; Banerjee, S. K. | ARTICLE | 48 |
| 2014-04 | L-g=100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer | Koh, D.; Kwon, H. M.; Kim, T-W; Kim, D-H; Hudnall, Todd W.; Bielawski, Christopher W.; Maszara, W.; Veksler, D.; Gilmer, D.; Kirsch, P. D.; Banerjee, S. K. | ARTICLE | 72 |
| 2013-11 | Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors | Shin, H. S.; Yum, J. H.; Johnson, D. W.; Harris, H. R.; Hudnall, Todd. W.; Oh, J.; Kirsch, P.; Wang, W. -E.; Bielawski, C. W.; Banerjee, S. K.; Lee, J. C.; Lee, H. D. | ARTICLE | 68 |
| 2012-03 | Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100) | Lei, Ming; Yum, J. H.; Price, J.; Hudnall, Todd W.; Bielawski, C. W.; Banerjee, S. K.; Lysaght, P. S.; Bersuker, G.; Downer, M. C. | ARTICLE | 44 |
