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Showing results 1 to 11 of 11

Issue DateTitleAuthor(s)TypeView
2012-12A study of capping layers for sulfur monolayer doping on III-V junctionsYum, J. H.; Shin, H. S.; Hill, R.; Oh, J.; Lee, H. D.; Mushinski, Ryan M.; Hudnall, Todd W.; Bielawski, C. W.; Banerjee, S. K.; Loh, W. Y.; Wang, Wei-E; Kirsch, PaulARTICLE51
2011-11A study of highly crystalline novel beryllium oxide film using atomic layer depositionYum, J. H.; Akyol, T.; Lei, M.; Ferrer, D. A.; Hudnall, Todd. W.; Downer, M.; Bielawski, C. W.; Bersuker, G.; Lee, J. C.; Banerjee, S. K.ARTICLE44
2011-03Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devicesYum, J. H.; Akyol, T.; Lei, M.; Hudnall, T.; Bersuker, G.; Downer, M.; Bielawski, C. W.; Lee, J. C.; Banerjee, S. K.ARTICLE45
2014-02Atomic layer etching of BeO using BCl3/Ar for the interface passivation layer of III-V MOS devicesMin, K. S.; Kang, S. H.; Kim, J. K.; Yum, J. H.; Jhon, Y. I.; Hudnall, Todd W.; Bielawski, C. W.; Banerjee, S. K.; Bersuker, G.; Jhon, M. S.; Yeom, G. Y.ARTICLE77
2012-10Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor DevicesYum, J. H.; Oh, J.; Hudnall, Todd. W.; Bielawski, Christopher W.; Bersuker, G.; Banerjee, S. K.ARTICLE43
2011-11Comparison of the self-cleaning effects and electrical characteristics of BeO and Al2O3 deposited as an interface passivation layer on GaAs MOS devicesYum, J. H.; Akyol, T.; Ferrer, D. A.; Lee, J. C.; Banerjee, S. K.; Lei, M.; Downer, M.; Hudnall, Todd. W.; Bielawski, C. W.; Bersuker, G.ARTICLE33
2012-01Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substratesYum, J. H.; Akyol, T.; Lei, M.; Ferrer, D. A.; Hudnall, Todd W.; Downer, M.; Bielawski, C. W.; Bersuker, G.; Lee, J. C.; Banerjee, S. K.ARTICLE68
2011-07Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectricYum, J. H.; Akyol, T.; Lei, M.; Ferrer, D. A.; Hudnall, Todd. W.; Downer, M.; Bielawski, C. W.; Bersuker, G.; Lee, J. C.; Banerjee, S. K.ARTICLE48
2014-04L-g=100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layerKoh, D.; Kwon, H. M.; Kim, T-W; Kim, D-H; Hudnall, Todd W.; Bielawski, Christopher W.; Maszara, W.; Veksler, D.; Gilmer, D.; Kirsch, P. D.; Banerjee, S. K.ARTICLE72
2013-11Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistorsShin, H. S.; Yum, J. H.; Johnson, D. W.; Harris, H. R.; Hudnall, Todd. W.; Oh, J.; Kirsch, P.; Wang, W. -E.; Bielawski, C. W.; Banerjee, S. K.; Lee, J. C.; Lee, H. D.ARTICLE68
2012-03Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100)Lei, Ming; Yum, J. H.; Price, J.; Hudnall, Todd W.; Bielawski, C. W.; Banerjee, S. K.; Lysaght, P. S.; Bersuker, G.; Downer, M. C.ARTICLE44
Showing results 1 to 11 of 11

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