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Low-Operation Voltage Non-Volatile Memory Characteristics with Oxide-Semiconductor Thin-Film Transistors Through Interaction Between Oxide Semiconductor Channel and Gate Oxide

Han, Jimin , Jeong, Boyoung , Yoon, Tae-Sik

Conference Paper Issue Date2023-04-12 View28
Non-Charge Storage Based Nonvolatile Memory with IGZO Oxide Semiconductor and LiCoOx Charge Trap & Ion Supplying Layer with Large Memory Window

Jeong, Boyoung , Han, Jimin , Noh, Taeyun , Yoon, Tae-Sik

Conference Paper Issue Date2023-04-12 View11
Non-volatile charge-trap memory characteristics with low-temperature atomic layer deposited HfO2-x charge-trap layer and interfacial tunneling oxide formed by UV/ozone treatment File

Han, Jimin , Jeong, Boyoung , Sahu, Dwipak Prasad , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2023-08 View20
Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide File File

Han, Jimin , Jeong, Boyoung , Kim, Yuri , Suh, Joonki , Jeong, Hongsik , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2022-08 View21
Substrate-immobilized electrospun TiO2nanofibers for photocatalyticdegradation of pharmaceuticals: The effects of pH and dissolvedorganic matter characteristics File

Maeng, Sung Kyu , Cho, Kangwoo , Jeong, Boyoung , Lee, Jaesang , Lee, Yunho , Lee, Changha , Choi, Kyoung Jin , Hong, Seok Won

Article Issue Date2015-12 View13
Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO x Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor File

Jeong, Boyoung , Han, Jimin , Noh, Taeyun , Yoon, Tae-Sik

Article Issue Date2023-05 View17
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