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A study of capping layers for sulfur monolayer doping on III-V junctions File

Yum, J. H. , Shin, H. S. , Hill, R. , Oh, J. , Lee, H. D. , Mushinski, Ryan M. , Hudnall, Todd W. , Bielawski, C. W. , Banerjee, S. K. , Loh, W. Y. , et al

Article Issue Date2012-12 View11
A study of highly crystalline novel beryllium oxide film using atomic layer deposition File

Yum, J. H. , Akyol, T. , Lei, M. , Ferrer, D. A. , Hudnall, Todd. W. , Downer, M. , Bielawski, C. W. , Bersuker, G. , Lee, J. C. , Banerjee, S. K.

Article Issue Date2011-11 View15
Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices File

Yum, J. H. , Akyol, T. , Lei, M. , Hudnall, T. , Bersuker, G. , Downer, M. , Bielawski, C. W. , Lee, J. C. , Banerjee, S. K.

Article Issue Date2011-03 View13
Atomic layer etching of BeO using BCl3/Ar for the interface passivation layer of III-V MOS devices File

Min, K. S. , Kang, S. H. , Kim, J. K. , Yum, J. H. , Jhon, Y. I. , Hudnall, Todd W. , Bielawski, C. W. , Banerjee, S. K. , Bersuker, G. , Jhon, M. S. , et al

Article Issue Date2014-02 View12
Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices File

Yum, J. H. , Oh, J. , Hudnall, Todd. W. , Bielawski, Christopher W. , Bersuker, G. , Banerjee, S. K.

Article Issue Date2012-10 View13
Comparison of the self-cleaning effects and electrical characteristics of BeO and Al2O3 deposited as an interface passivation layer on GaAs MOS devices File

Yum, J. H. , Akyol, T. , Ferrer, D. A. , Lee, J. C. , Banerjee, S. K. , Lei, M. , Downer, M. , Hudnall, Todd. W. , Bielawski, C. W. , Bersuker, G.

Article Issue Date2011-11 View14
Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates File

Yum, J. H. , Akyol, T. , Lei, M. , Ferrer, D. A. , Hudnall, Todd W. , Downer, M. , Bielawski, C. W. , Bersuker, G. , Lee, J. C. , Banerjee, S. K.

Article Issue Date2012-01 View15
Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric File

Yum, J. H. , Akyol, T. , Lei, M. , Ferrer, D. A. , Hudnall, Todd. W. , Downer, M. , Bielawski, C. W. , Bersuker, G. , Lee, J. C. , Banerjee, S. K.

Article Issue Date2011-07 View25
L-g=100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer File

Koh, D. , Kwon, H. M. , Kim, T-W , Kim, D-H , Hudnall, Todd W. , Bielawski, Christopher W. , Maszara, W. , Veksler, D. , Gilmer, D. , Kirsch, P. D. , et al

Article Issue Date2014-04 View30
Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors File

Shin, H. S. , Yum, J. H. , Johnson, D. W. , Harris, H. R. , Hudnall, Todd. W. , Oh, J. , Kirsch, P. , Wang, W. -E. , Bielawski, C. W. , Banerjee, S. K. , et al

Article Issue Date2013-11 View11
Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100) File

Lei, Ming , Yum, J. H. , Price, J. , Hudnall, Todd W. , Bielawski, C. W. , Banerjee, S. K. , Lysaght, P. S. , Bersuker, G. , Downer, M. C.

Article Issue Date2012-03 View14
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