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백정민

Baik, Jeong Min
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Enhanced Curie temperature persisting between 100 and 200 K (similar to 50 K by theory) with Mn (similar to 0.290%) based on InMnP : Zn

Author(s)
Shon, YoonJeon, H. C.Lee, SejoonLee, S. -W.Kim, D. Y.Kang, T. W.Kim, Eun KyuYoon, Chong S.Kim, C. K.Park, Y. J.Kim, YongminBaik, Jeong MinLee, J. L.
Issued Date
2006-12
DOI
10.1016/j.jcrysgro.2006.10.133
URI
https://scholarworks.unist.ac.kr/handle/201301/8951
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=33845596540
Citation
JOURNAL OF CRYSTAL GROWTH, v.297, no.2, pp.289 - 293
Abstract
The samples with the Mn concentrations of 0.290% and 0.062% revealed that both in the calculated diffraction pattern and experimental pattern of transmission electron microscopy (TEM), the FCC lattice was still maintained after the Mn doping. The regularly spaced spots of ordered Mn produce the anomalous Hall effect (AHE) showing the characteristics of diluted magnetic semiconductor, which is caused by hole-mediated ferromagnetism due to the increase of hole concentration in tetrahedrally coordinated semiconductor. Ferrornagnetic semiconductor of T-c between 100 and 200 K demonstrated by TEM and AHE can be formed in diluted magnetic semiconductor based on InMnP:Zn epilayers additionally co-doped with Zn.
Publisher
ELSEVIER SCIENCE BV
ISSN
0022-0248
Keyword (Author)
metalorganic chemical vapor depositionmolecular beam epitaxymagnetic materialssemiconducting indium phosphide
Keyword
DILUTED MAGNETIC SEMICONDUCTORNEUTRAL MANGANESE ACCEPTORIII-V SEMICONDUCTORSROOM-TEMPERATUREFERROMAGNETISMGAN

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