File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Choi, Kyoung Jin
- Energy Conversion Materials Lab.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
GaAs MESFET fabrication using (NH4)2Sx solution sulphur diffusion technique
- Author(s)
- Lee, JL, Choi, Kyoung Jin
- Issued Date
- 1998-05
- Citation
- ELECTRONICS LETTERS, v.34, no.11, pp.1152 - 1153
- Abstract
- A newly developed sulphur diffusion method for fabricating GaAs FETs is demonstrated. Sulphur atoms adsorbed at the surface of GaAs by the (NH(4))(2)S(x) treatment were diffused into GaAs during rapid thermal annealing. Transconductance as high as 190mS/mm was obtained for MESFETs with 1.0 mu m gate length, fabricated on the lavers diffused by this technique. This diffusion technique was found to be suitable for GaAs device fabrication.
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- ISSN
- 0013-5194
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.