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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Growth behavior and optical properties of In-rich InGaN quantum dots by metal-organic chemical vapor deposition

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Title
Growth behavior and optical properties of In-rich InGaN quantum dots by metal-organic chemical vapor deposition
Author
Kim, Hee JinKwon, Soon-YongKim, Hyun JinNa, HyunseokShin, YooriLee, Keon-HunKwak, Ho-SangCho, Yong HoonYoon, Jung WonCheong, HyeonsikYoon, Euijoon
Keywords
Blue lasers; Growth behavior; In-rich InGaN; International symposium; Metal-organic chemical vapor deposition
Issue Date
2007
Publisher
Wiley-VCH Verlag
Citation
Physica Status Solidi (C) Current Topics in Solid State Physics, v.4, no.1, pp.112 - 115
Abstract
We successfully grew In-rich In0.8Ga0.2N/GaN quantum dots (QDs) by metal-organic chemical vapor deposition. We obtained uniform QDs with density of 1.3 × 1010 /cm2 by optimizing growth conditions. Strong photoluminescence (PL) emission from In-rich InGaN/GaN QDs was observed at room temperature and emission wavelength was varied from 404 nm to 454 nm depending on QD size. It is strongly suggested that QDs leads to higher radiative recombination efficiency from temperature-dependent PL measurement.
URI
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DOI
http://dx.doi.org/10.1002/pssc.200673558
ISSN
1862-6351
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