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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

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Title
Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
Author
Kwack, Ho-SangKwon, Bong-JoonChung, Jin-SooCho, Yong-HoonKim, Hee JinKwon, Soon-YongYoon, Euijoon
Keywords
FUNDAMENTAL-BAND GAP; ENERGY
Issue Date
200810
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.93, no.16, pp.1 - 3
Abstract
We investigated the spontaneous and stimulated emission properties of violet-light-emitting ultrathin In-rich InGaN/GaN multiple quantum wells (MQWs) with indium content of 60%-70%. The Stokes shift was smaller than that of In-poor InGaN MQWs, and the emission peak position at 3.196 eV was kept constant with increasing pumping power, indicating negligible quantum confined Stark effect in ultrathin In-rich InGaN MQWs despite of high indium content. Optically pumped stimulated emission performed at room temperature was observed at 3.21 eV, the high-energy side of spontaneous emission, when the pumping power density exceeds ∼31 kW/ cm2.
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DOI
http://dx.doi.org/10.1063/1.3002300
ISSN
0003-6951
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MSE_Journal Papers
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