Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant

Abstract

Ruthenium (Ru) thin films were grown on thermally-grown SiO2 substrates by plasma enhanced atomic layer deposition (PEALD) using a sequential supply of a new betadiketonate Ru metal-organic precursor, dicarbonyl-bis(5-methyl-2,4-hexanediketonato) Ru(II) (C16H22O6Ru) with a high vapor pressure and NH3 plasma as a reactant at the substrate temperature ranging from 175 and 310 degrees C. A self-limited film growth was confirmed at the deposition temperature of 225 degrees C and the growth rate was 0.063 nm/cycle on the SiO2 substrate with very short number of incubation cycles (approximately 10 cycles). The resistivity of PEALD-Ru films was dependent on the microstructural features characterized by grain size and crystallinity, which could be controlled by varying the deposition temperature. Ru film with the resistivity of similar to 20 mu Omega-cm and high density of 11.5 g/cm(3) was obtained at the deposition temperature as low as 225 degrees C. It formed polycrystalline structure with hexagonal-close-packed phase that was confirmed by X-ray diffractometry and transmission electronic microscopy analysis. Step coverage of PEALD-Ru film deposited with the optimum condition was good (similar to 75%) at the very small-sized trench (aspect ratio: similar to 4.5 and the top opening size of 25 nm).