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- Jeong, Changwook
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Nanoscale-nMOSFET junction design: Quantum transport approach
- Author(s)
- Pourghaderi, M. Ali, Park, Chulwoo, Kim, Jongchol, Jeong, Changwook, Chung, Won-Young, Lee, Keun-Ho, Park, Hong-Hyun, Pham, Anh-Tuan, Jin, Seonghoon, Choi, Woosung
- Issued Date
- 2017-09-07
- Citation
- 2017 International Conference on Simulation of Semiconductor Processes and Devices, pp.53 - 56
- Abstract
- Employing quantum transport solver, we have demonstrated the impact of junction proximity and abruptness on device performance. To entail the discrete dopant effect accurately, impurity scattering has been introduced in non-perturbative way. The electrostatic metrics and effective current have been evaluated for practical dimensions and technologically relevant junctions. A simple guideline for junction design has been concluded.
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
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