Solution processed IZTO thin film transistor on silicon nitride dielectric layer

Abstract

Solution process-based inorganic indium-zinc-tin oxide semiconductor layer was applied to fabricate a thin film transistor (TFT) by annealing at 600 degrees C on plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) dielectric layer. The spin-coated indium-zinc-tin oxide (IZTO) transistor has a field-effect mobility of 4.36 cm(2)/V s with on/off ratio of 10(5) having the subthreshold voltage shift of 0.537 V/dec. The device characterization and surface analysis after annealing were performed and compared with results before annealing. Our results offer the feasibility of solution-based oxide semiconductor transistors for cost-effective display or other electronic devices. (C) 2011 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.