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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 99 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 96 | - |
dc.citation.title | JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY | - |
dc.citation.volume | 17 | - |
dc.contributor.author | Kim, Bong-Jin | - |
dc.contributor.author | Kim, Hyung-Jun | - |
dc.contributor.author | Yoon, Tae-Sik | - |
dc.contributor.author | Kim, Yong-Sang | - |
dc.contributor.author | Lee, Doo-Hyoung | - |
dc.contributor.author | Choi, Youngmin | - |
dc.contributor.author | Ryu, Byung-Hwan | - |
dc.contributor.author | Lee, Hyun Ho | - |
dc.date.accessioned | 2023-12-22T06:36:45Z | - |
dc.date.available | 2023-12-22T06:36:45Z | - |
dc.date.created | 2021-03-06 | - |
dc.date.issued | 2011-01 | - |
dc.description.abstract | Solution process-based inorganic indium-zinc-tin oxide semiconductor layer was applied to fabricate a thin film transistor (TFT) by annealing at 600 degrees C on plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) dielectric layer. The spin-coated indium-zinc-tin oxide (IZTO) transistor has a field-effect mobility of 4.36 cm(2)/V s with on/off ratio of 10(5) having the subthreshold voltage shift of 0.537 V/dec. The device characterization and surface analysis after annealing were performed and compared with results before annealing. Our results offer the feasibility of solution-based oxide semiconductor transistors for cost-effective display or other electronic devices. (C) 2011 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved. | - |
dc.identifier.bibliographicCitation | JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, v.17, no.1, pp.96 - 99 | - |
dc.identifier.doi | 10.1016/j.jiec.2010.12.003 | - |
dc.identifier.issn | 1226-086X | - |
dc.identifier.scopusid | 2-s2.0-79952696771 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50275 | - |
dc.identifier.wosid | 000289334600017 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE INC | - |
dc.title | Solution processed IZTO thin film transistor on silicon nitride dielectric layer | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Engineering, Chemical | - |
dc.relation.journalResearchArea | Chemistry; Engineering | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordAuthor | Indium-zinc-tin oxide | - |
dc.subject.keywordAuthor | TFT | - |
dc.subject.keywordAuthor | Silicon nitride | - |
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