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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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Voltage-dependent resistive switching characteristics in mixed layer consisting of gamma-Fe2O3 and Pt-Fe2O3 core-shell nanoparticles
- Author(s)
- Lee, Jin-Yong, Kim, Jae-Deuk, Baek, Yoon-Jae, Choi, Young Jin, Kang, Chi Jung, Lee, Hyun Ho, Yoon, Tae-Sik
- Issued Date
- 2014-03
- Citation
- APPLIED PHYSICS LETTERS, v.104, no.9
- Abstract
- A mixed layer of gamma-Fe2O3 and Pt-Fe2O3 core-shell nanoparticles between Ti and Pt electrodes exhibited both analog and digital bipolar resistive switching depending on applied voltage. The resistance sequentially reduced with repeated -1.5V sweeps and pulses for 100 ms and increased as repeating +1.5 V. After forming at +3V, digital bipolar switching was achieved with SET transition from high to low resistance at +1 to 2V and reverse RESET transition at -1V. Pulse operation at +/- 2V led to identical bipolar switching, associated with facilitated interconnection of filament segments between Pt cores in nanoparticle layer. (C) 2014 AIP Publishing LLC.
- Publisher
- AMER INST PHYSICS
- ISSN
- 0003-6951
- Keyword
- TRANSITION-METAL OXIDES, MEMORIES, SYSTEMS, DEVICE
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