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윤태식

Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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DC Field Value Language
dc.citation.number 9 -
dc.citation.title APPLIED PHYSICS LETTERS -
dc.citation.volume 104 -
dc.contributor.author Lee, Jin-Yong -
dc.contributor.author Kim, Jae-Deuk -
dc.contributor.author Baek, Yoon-Jae -
dc.contributor.author Choi, Young Jin -
dc.contributor.author Kang, Chi Jung -
dc.contributor.author Lee, Hyun Ho -
dc.contributor.author Yoon, Tae-Sik -
dc.date.accessioned 2023-12-22T02:45:22Z -
dc.date.available 2023-12-22T02:45:22Z -
dc.date.created 2021-03-05 -
dc.date.issued 2014-03 -
dc.description.abstract A mixed layer of gamma-Fe2O3 and Pt-Fe2O3 core-shell nanoparticles between Ti and Pt electrodes exhibited both analog and digital bipolar resistive switching depending on applied voltage. The resistance sequentially reduced with repeated -1.5V sweeps and pulses for 100 ms and increased as repeating +1.5 V. After forming at +3V, digital bipolar switching was achieved with SET transition from high to low resistance at +1 to 2V and reverse RESET transition at -1V. Pulse operation at +/- 2V led to identical bipolar switching, associated with facilitated interconnection of filament segments between Pt cores in nanoparticle layer. (C) 2014 AIP Publishing LLC. -
dc.identifier.bibliographicCitation APPLIED PHYSICS LETTERS, v.104, no.9 -
dc.identifier.doi 10.1063/1.4868015 -
dc.identifier.issn 0003-6951 -
dc.identifier.scopusid 2-s2.0-84896759921 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/50243 -
dc.identifier.wosid 000332729200111 -
dc.language 영어 -
dc.publisher AMER INST PHYSICS -
dc.title Voltage-dependent resistive switching characteristics in mixed layer consisting of gamma-Fe2O3 and Pt-Fe2O3 core-shell nanoparticles -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Physics, Applied -
dc.relation.journalResearchArea Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus TRANSITION-METAL OXIDES -
dc.subject.keywordPlus MEMORIES -
dc.subject.keywordPlus SYSTEMS -
dc.subject.keywordPlus DEVICE -

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