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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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Resistive Switching Characteristics in MnO Nanoparticle Assembly and Ag2Se Thin Film Devices
- Author(s)
- Hu, Quanli, Lee, Tae Sung, Lee, Nam Joo, Kang, Tae Su, Park, Mi Ra, Yoon, Tae-Sik, Lee, Hyun Ho, Kang, Chi Jung
- Issued Date
- 2017-10
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.10, pp.7189 - 7193
- Abstract
- Ligand-capped monodisperse manganese oxide nanoparticles were chemically synthesized via thermal decomposition. A close-packed nanoparticle monolayer was formed on a Au bottom electrode via dip-coating and annealing. As2Se/MnO heterostructures with a Ag top electrode and a Au bottom electrode were fabricated. The Ag/Ag2Se/MnO/Au devices presented stable bipolar resistive switching behaviors, with low voltage operation (-0.5/+0.8 V) and good endurance and retention properties. The bipolar resistive switching characteristics were attributed to the formation of conductive filaments in the Ag2Se/MnO bilayers. The conduction mechanisms were explained by the ohmic conduction, Schottky emission, and space-charge-limited conduction (SCLC) mechanisms for the low resistance state and high resistance state, respectively.
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- ISSN
- 1533-4880
- Keyword (Author)
- Ag2Se, Manganese Oxide Nanoparticle, Resistive Switching
- Keyword
- MECHANISMS, MEMORIES
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