Resistive Switching Characteristics in MnO Nanoparticle Assembly and Ag2Se Thin Film Devices

Abstract

Ligand-capped monodisperse manganese oxide nanoparticles were chemically synthesized via thermal decomposition. A close-packed nanoparticle monolayer was formed on a Au bottom electrode via dip-coating and annealing. As2Se/MnO heterostructures with a Ag top electrode and a Au bottom electrode were fabricated. The Ag/Ag2Se/MnO/Au devices presented stable bipolar resistive switching behaviors, with low voltage operation (-0.5/+0.8 V) and good endurance and retention properties. The bipolar resistive switching characteristics were attributed to the formation of conductive filaments in the Ag2Se/MnO bilayers. The conduction mechanisms were explained by the ohmic conduction, Schottky emission, and space-charge-limited conduction (SCLC) mechanisms for the low resistance state and high resistance state, respectively.