2014 14th IEEE International Conference on Nanotechnology, pp.150 - 153
Abstract
In this work, we have shown that plasma-wave transistor (PWT) operates as a terahertz (THz) emitter below maximum gate length (Lmax). Because the channel mobility (p) of strained silicon (sSi) is higher than silicon (Si), we investigate how emission frequency range and Lmax of sSi PWT THz emitter are improved compared to Si PWT THz emitter by analyzing the effect of momentum relaxation time (rp) and electron effective mass (m) on a design window of PWT THz emitter.