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Author

Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors

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Title
Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors
Author
Cho, SeongjaeLee, Jae SungKim, Kyung RokPark, Byung-GookHarris, James S.Kang, In Man
Keywords
Gate-all-around; Non quasi static; radio-frequency (RF); small-signal parameters; technology computer-aided design (TCAD); tunneling field-effect transistor (TFET)
Issue Date
201112
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.12, pp.4164 - 4171
Abstract
The small-signal parameters of gate-all-around tunneling field-effect transistors (GAA TFETs) with different gate lengths were extracted and analyzed in terms of their gate capacitance, source-drain conductance, transconductance, distributed channel resistance, and inversion layer length. Because of the unique current drive and inversion layer formation mechanisms of a TFET compared to a conventional MOSFET, the gate-bias dependence values of the primary small-signal parameters of a GAA TFET also differ. Based on understanding these parameters, the high-frequency performances of GAA TFETs were investigated using a technology computer-aided design simulation. A nonquasi-static radio-frequency model was used to extract the small-signal parameters, which were verified up to 100 GHz. The modeling results showed excellent agreement with the Y-parameters up to the cutoff frequency f(T).
URI
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DOI
http://dx.doi.org/10.1109/TED.2011.2167335
ISSN
0018-9383
Appears in Collections:
ECE_Journal Papers

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