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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 4171 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 4164 | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 58 | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Lee, Jae Sung | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.contributor.author | Harris, James S. | - |
dc.contributor.author | Kang, In Man | - |
dc.date.accessioned | 2023-12-22T05:40:04Z | - |
dc.date.available | 2023-12-22T05:40:04Z | - |
dc.date.created | 2013-06-10 | - |
dc.date.issued | 2011-12 | - |
dc.description.abstract | The small-signal parameters of gate-all-around tunneling field-effect transistors (GAA TFETs) with different gate lengths were extracted and analyzed in terms of their gate capacitance, source-drain conductance, transconductance, distributed channel resistance, and inversion layer length. Because of the unique current drive and inversion layer formation mechanisms of a TFET compared to a conventional MOSFET, the gate-bias dependence values of the primary small-signal parameters of a GAA TFET also differ. Based on understanding these parameters, the high-frequency performances of GAA TFETs were investigated using a technology computer-aided design simulation. A nonquasi-static radio-frequency model was used to extract the small-signal parameters, which were verified up to 100 GHz. The modeling results showed excellent agreement with the Y-parameters up to the cutoff frequency f(T). | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.12, pp.4164 - 4171 | - |
dc.identifier.doi | 10.1109/TED.2011.2167335 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.scopusid | 2-s2.0-82155195856 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/4290 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=82155195856 | - |
dc.identifier.wosid | 000297337000005 | - |
dc.language | 영어 | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors | - |
dc.type | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Physics, Applied | - |
dc.relation.journalResearchArea | Engineering; Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Gate-all-around (GAA) | - |
dc.subject.keywordAuthor | modeling | - |
dc.subject.keywordAuthor | nonquasi-static (NQS) | - |
dc.subject.keywordAuthor | radio-frequency (RF) | - |
dc.subject.keywordAuthor | small-signal parameters | - |
dc.subject.keywordAuthor | technology computer-aided design (TCAD) | - |
dc.subject.keywordAuthor | tunneling field-effect transistor (TFET) | - |
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