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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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Growth characteristics and electrical properties of diameter-selective InAs nanowires

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Title
Growth characteristics and electrical properties of diameter-selective InAs nanowires
Author
Shin, Jae CheolLee, AriKim, Hyo JinKim, Jae HunChoi, Kyoung JinKim, Young HunKim, NamBae, Myung-HoKim, Ju-JinKim, Bum-Kyu
Keywords
Field-effect transistor; InAs nanowire; Mobility; MOCVD
Issue Date
201306
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.11, pp.1678 - 1682
Abstract
Smaller-diameter semiconductor nanowires (NWs) are appropriate for electronic applications due to the lower leakage current and better field effect. However, the mobility of a NW gets smaller with decreasing diameter because surface scattering events of mobile carriers are increased. Therefore, the choice of a proper diameter is a key role for future high-performance transistors based on semiconductor NWs. Here, we control the diameters of catalyst-free InAs NWs grown at various growth temperatures by using metal-organic chemical vapor deposition to be in the range of 30 to 160 nm. The mobility of the fabricated InAs field-effect transistor increases with diameter and decreases with increasing temperature, which indicates that the surface scattering determines the electrical property of NWs.
URI
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DOI
http://dx.doi.org/10.3938/jkps.62.1678
ISSN
0374-4884
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