BROWSE

Related Researcher

Author

Ko, Hyunhyub
Functional Nanomaterials & Devices Lab
Research Interests
  • Functional nanomaterials, flexible electronics, electronic skins, wearable sensors

ITEM VIEW & DOWNLOAD

Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

Cited 0 times inthomson ciCited 0 times inthomson ci
Title
Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates
Author
Kim, Kyung-HoUm, Doo-SeungLee, HochanLim, SeongdongChang, JoonyeonKoo, Hyun CheolOh, Min-WookKo, HyunhyubKim, Hyung-jun
Keywords
epitaxial transfer; high-electron mobility transistor; selective wet-etching; spin field-effect transistor; spin-orbit interaction
Issue Date
201310
Publisher
AMER CHEMICAL SOC
Citation
ACS NANO, v.7, no.10, pp.9106 - 9114
Abstract
We demonstrate gate-controlled spin-orbit interaction (SOI) in InAs high-electron mobility transistor (HEMT) structures transferred epitaxially onto Si substrates. Successful epitaxial transfer of the multilayered structure after separation from an original substrate ensures that the InAs HEMT maintains a robust bonding interface and crystalline quality with a high electron mobility of 46200 cm2/(V s) at 77 K. Furthermore, Shubnikov-de Haas (SdH) oscillation analysis reveals that a Rashba SOI parameter (α) can be manipulated using a gate electric field for the purpose of spin field-effect transistor operation. An important finding is that the α value increases by about 30% in the InAs HEMT structure that has been transferred when compared to the as-grown structure. First-principles calculations indicate that the main causes of the large improvement in α are the bonding of the InAs HEMT active layers to a SiO2 insulating layer with a large band gap and the strain relaxation of the InAs channel layer during epitaxial transfer. The experimental results presented in this study offer a technological platform for the integration of III-V heterostructures onto Si substrates, permitting the spintronic devices to merge with standard Si circuitry and technology.
URI
Go to Link
DOI
http://dx.doi.org/10.1021/nn403715p
ISSN
1936-0851
Appears in Collections:
ECHE_Journal Papers

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU