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Chung, Il-Sug
Nano-Optoelectronics Lab.
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Intracavity-contacted resonant cavity enhanced photodetectors based on VCSEL structure

Author(s)
Chung, Il-SugChoi, Jin-KyungChang, Ki-SooAlameh, KamalLee, Yong Tak
Issued Date
2006-09-05
DOI
10.1117/12.691608
URI
https://scholarworks.unist.ac.kr/handle/201301/37439
Fulltext
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/6352/1/Intracavity-contacted-resonant-cavity-enhanced-photodetectors-based-on-VCSEL-structure/10.1117/12.691608.full
Citation
Optoelectronic Materials and Devices, v.6352 I
Abstract
Intracavity-contacted resonant cavity enhanced photodetectors (IC RCEPDs) have been fabricated for monolithic integration with IC VCSELs. A low parasitic capacitance of 0.39 pF and an extrinsic 3-dB bandwidth of 9 GHz are demonstrated by using coplanar metal contacts. Optimization issues on device and epi designs are discussed. The largest frequency saturation photocurrent below which the extrinsic 3-dB bandwidth exceeds 6.5 GHz is 4.2 μA.
Publisher
Optoelectronic Materials and Devices

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