Non-Quasi-Static Modeling of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor and Its Model Verification up to 1 THz
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- Non-Quasi-Static Modeling of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor and Its Model Verification up to 1 THz
- Cho, Seongjae; Kim, Kyung Rok; Park, Byung-Gook; Kang, In Man
- Channel length; Core components; Device simulations; Metal-oxide-semiconductor field-effect transistor; Model verification; Modeling results; MOS-FET; Non quasi static; Radio frequencies; Realistic model; RF system; Saturation region; Silicon Nanowires; Small signal equivalent circuit; Three-dimensional (3D)
- Issue Date
- JAPAN SOC APPLIED PHYSICS
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.11, pp.1 - 3
- In this work the radio-frequency (RF) performances of a silicon nanowire (SNW) metal-oxide-semiconductor field effect transistor (MOSFET) were modeled by being grafted into the non-quasi-static (NQS) small-signal equivalent circuit for the first time. The parameters were analytically extracted from three-dimensional (3D) device simulations. The cutoff frequencies of an SNW MOSFET with a 30nm channel length and a 5 nm radius were 504 and 545 GHz in the linear and saturation regions, respectively The reliability of modeling results was verified by the simulations including realistic models It was confirmed that the SNW MOSFET would be the promising candidate as a core component for RF systems aiming 1 THz operation.
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