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- Choi, EunMi
- THz Vacuum Electronics and Applied Electromagnetics Lab.
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Highly-Sensitive Plasmonic Nano-Ring Transistor for Monolithic Terahertz Active Antenna
- Author(s)
- Ryu, Min Woo, Patel, Ramesh, Jang, ESan, Ahn, Sang Hyo, Jeon, Hyeong Ju, Choe, Mun Seok, Choi, EunMi, Han, Ki Jin, Kim, Kyung Rok
- Issued Date
- 2017-07-26
- Citation
- The 17th IEEE International Conference on Nanotechnology (IEEE NANO 2017), pp.17 - 21
- Abstract
- We report a highly-sensitive plasmonic nano-ring transistor for monolithic terahertz (THz) active antenna. By designing an ultimate asymmetric transistor on a metal-gate structure, more enhanced (180 times) channel charge asymmetry has been obtained in comparison with a bar-type asymmetric transistor of our previous work. In addition, by exploiting ring-type transistor itself as a monolithic circular active antenna, which is designed for a 0.12-THz resonance frequency, we experimentally demonstrated the highly-enhanced responsivity (Rv) > 1 kV/W (x 5) and reduced noise-equivalent power (NEP) < 10 pW/Hz0.5 (x 1/10).
- Publisher
- The 17th IEEE International Conference on Nanotechnology (IEEE NANO 2017)
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