There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.conferencePlace | US | - |
dc.citation.conferencePlace | Pittsburgh Marriott City CenterPittsburgh | - |
dc.citation.endPage | 21 | - |
dc.citation.startPage | 17 | - |
dc.citation.title | The 17th IEEE International Conference on Nanotechnology (IEEE NANO 2017) | - |
dc.contributor.author | Ryu, Min Woo | - |
dc.contributor.author | Patel, Ramesh | - |
dc.contributor.author | Jang, ESan | - |
dc.contributor.author | Ahn, Sang Hyo | - |
dc.contributor.author | Jeon, Hyeong Ju | - |
dc.contributor.author | Choe, Mun Seok | - |
dc.contributor.author | Choi, EunMi | - |
dc.contributor.author | Han, Ki Jin | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.date.accessioned | 2023-12-19T18:37:17Z | - |
dc.date.available | 2023-12-19T18:37:17Z | - |
dc.date.created | 2017-10-18 | - |
dc.date.issued | 2017-07-26 | - |
dc.description.abstract | We report a highly-sensitive plasmonic nano-ring transistor for monolithic terahertz (THz) active antenna. By designing an ultimate asymmetric transistor on a metal-gate structure, more enhanced (180 times) channel charge asymmetry has been obtained in comparison with a bar-type asymmetric transistor of our previous work. In addition, by exploiting ring-type transistor itself as a monolithic circular active antenna, which is designed for a 0.12-THz resonance frequency, we experimentally demonstrated the highly-enhanced responsivity (Rv) > 1 kV/W (x 5) and reduced noise-equivalent power (NEP) < 10 pW/Hz0.5 (x 1/10). | - |
dc.identifier.bibliographicCitation | The 17th IEEE International Conference on Nanotechnology (IEEE NANO 2017), pp.17 - 21 | - |
dc.identifier.doi | 10.1109/NANO.2017.8117385 | - |
dc.identifier.scopusid | 2-s2.0-85041215204 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/35277 | - |
dc.identifier.url | http://ieeexplore.ieee.org/document/8117385/ | - |
dc.language | 영어 | - |
dc.publisher | The 17th IEEE International Conference on Nanotechnology (IEEE NANO 2017) | - |
dc.title | Highly-Sensitive Plasmonic Nano-Ring Transistor for Monolithic Terahertz Active Antenna | - |
dc.type | Conference Paper | - |
dc.date.conferenceDate | 2017-07-25 | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.