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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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Structural Characteristics of Ternary InxGa1-xAs Nanowires on Si (111) Grown via Au-Catalyzed VLS

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Title
Structural Characteristics of Ternary InxGa1-xAs Nanowires on Si (111) Grown via Au-Catalyzed VLS
Author
Shin, Jae CheolKim, Do YangPark, Jae HyungOh, Si DuckKo, Hang JuHan, Myung SooKim, Jae HunChoi, Kyoung JinKim, Hyo Jin
Keywords
Energy dispersive x-ray spectroscopy; In compositions; Near-infrared range; Optimized conditions; Silicon substrates; Structural characteristics; Transmission electron microscopy (TEM); Vapor-liquid-solid
Issue Date
201305
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.5, pp.3511 - 3514
Abstract
We have characterized the structural properties of the ternary In xGa1-xAs nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the InxGa1-xAs NW array grown under optimized condition exceeds 1 × 108/cm2. X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the InxGa 1-xAs nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.
URI
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DOI
http://dx.doi.org/10.1166/jnn.2013.7301
ISSN
1533-4880
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