Structural Characteristics of Ternary InxGa1-xAs Nanowires on Si (111) Grown via Au-Catalyzed VLS
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- Structural Characteristics of Ternary InxGa1-xAs Nanowires on Si (111) Grown via Au-Catalyzed VLS
- Shin, Jae Cheol; Kim, Do Yang; Park, Jae Hyung; Oh, Si Duck; Ko, Hang Ju; Han, Myung Soo; Kim, Jae Hun; Choi, Kyoung Jin; Kim, Hyo Jin
- Energy dispersive x-ray spectroscopy; In compositions; Near-infrared range; Optimized conditions; Silicon substrates; Structural characteristics; Transmission electron microscopy (TEM); Vapor-liquid-solid
- Issue Date
- AMER SCIENTIFIC PUBLISHERS
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.5, pp.3511 - 3514
- We have characterized the structural properties of the ternary In xGa1-xAs nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the InxGa1-xAs NW array grown under optimized condition exceeds 1 × 108/cm2. X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the InxGa 1-xAs nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.
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