Characteristics of Strain-Induced In(x)Gai(1-x)As Nanowires Grown on Si(111) Substrates
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- Characteristics of Strain-Induced In(x)Gai(1-x)As Nanowires Grown on Si(111) Substrates
- Shin, Jae Cheol; Choi, Kyoung Jin; Kim, Do Yang; Choi, Won Jun; Li, Xiuling
- Composition variation; Energy dispersive x-ray spectroscopy; Morphological features; Si(111) substrate; Silicon substrates; Small fluctuation; Vapor-liquid-solid mechanism
- Issue Date
- AMER CHEMICAL SOC
- CRYSTAL GROWTH & DESIGN, v.12, no.6, pp.2994 - 2998
- Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of In(chi)Gal(1-chi)As on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor-liquid-solid mechanism, strain-induced In chi Ga1-chi As NWs have several unique morphological features including no tapering, slight bending, and composition-dependent NW height saturation. Although small fluctuation exists, no systematic composition variations are observed over the entire In chi Ga1-chi As NW length within the resolution of the energy-dispersive X-ray spectroscopy analysis.
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