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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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Characteristics of Strain-Induced In(x)Gai(1-x)As Nanowires Grown on Si(111) Substrates

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Title
Characteristics of Strain-Induced In(x)Gai(1-x)As Nanowires Grown on Si(111) Substrates
Author
Shin, Jae CheolChoi, Kyoung JinKim, Do YangChoi, Won JunLi, Xiuling
Keywords
Composition variation; Energy dispersive x-ray spectroscopy; Morphological features; Si(111) substrate; Silicon substrates; Small fluctuation; Vapor-liquid-solid mechanism
Issue Date
201206
Publisher
AMER CHEMICAL SOC
Citation
CRYSTAL GROWTH & DESIGN, v.12, no.6, pp.2994 - 2998
Abstract
Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of In(chi)Gal(1-chi)As on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor-liquid-solid mechanism, strain-induced In chi Ga1-chi As NWs have several unique morphological features including no tapering, slight bending, and composition-dependent NW height saturation. Although small fluctuation exists, no systematic composition variations are observed over the entire In chi Ga1-chi As NW length within the resolution of the energy-dispersive X-ray spectroscopy analysis.
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DOI
http://dx.doi.org/10.1021/cg300210h
ISSN
1528-7483
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