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Bias dependence of PBTI degradation mechanism in metal-oxide-semiconductor field effect transistors with La-incorporated hafnium-based dielectric

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Title
Bias dependence of PBTI degradation mechanism in metal-oxide-semiconductor field effect transistors with La-incorporated hafnium-based dielectric
Author
Jang, Tae-YoungKim, Dong-HyoubKim, JungwooChang, Jun SukJeong, Jae KyeongHeo, Yoon-UkKim, Young-KiChoi, ChanghwanPark, HokyungChoi, Rino
Keywords
Bias dependence; Degradation mechanism; Flat-band voltage; HRTEM analysis; Interface dipole; Metal oxide semiconductor field-effect transistors; MOS-FET; MOSFETs; PBTI; Positive bias; Tunneling mechanism
Issue Date
201107
Publisher
ELSEVIER SCIENCE BV
Citation
MICROELECTRONIC ENGINEERING, v.88, no.7, pp.1373 - 1375
Abstract
Metal-oxide-semiconductor field effect transistors (MOSFETs) with various concentrations of La incorporated in Hf-based dielectrics were characterized to evaluate the effect of La on devices' reliability. Compared with the small dependence of positive bias stress instability (PBTI) on stress bias in samples without La incorporation, significant dependence of PBTI degradation on stress bias was observed in the La-incorporated samples. HRTEM analysis and flat band voltage modulation data supported the interface dipole model, suggesting that this bias dependence of PBTI degradation in the La-incorporated samples could be explained by changes of electron tunneling mechanism due to interface dipoles.
URI
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DOI
http://dx.doi.org/10.1016/j.mee.2011.03.106
ISSN
0167-9317
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